PHYSICAL FOUNDATIONS
OF
SOLID STATE AND ELECTRON DEVICES
Altan M. Ferendeci
Electrical and Computer Enginering Department
University of Cincinnati
Published by
McGraw Hill
Comp. First Edition (
1991
)
INTRODUCTION
CHAPTER I
INTRODUCTORY PHYSICAL CONCEPTS
1.1 CONCEPTS OF QUANTUM MECHANICS
1.2 WAVE FUNCTION AND WAVE-PACKETS
1.3 SCHRODINGER EQUATION.
1.5 TUNNELING PHENOMENON
CHAPTER II
BOUND PARTICLES
2.1 BOUND PARTICLES
2.2 ONE DIMENSIONAL INFINITE POTENTIAL WELL
2.3 HYDROGEN ATOM
2.4 PAULI EXCLUSION PRINCIPLE
2.5 PARTICLE IN A THREE DIMENSIONAL WELL AND AVAILABLE STATES
2.6 DENSITY OF AVAILABLE STATES
2.8* IONIZATION AND RECOMBINATION IN GASES
2.8* PLASMA SPACE CHARGE FIELDS
2.8.1* DEBYE LENGTH.
2.8.2*. PLASMA FREQUENCY.
CHAPTER III
EQUILIBRIUM STATISTICAL MECHANICS
3.1 FUNDAMENTALS OF STATISTICAL MECHANICS
3.2 GENERAL PROPERTIES OF DISTRIBUTION FUNCTIONS
3.3 PHYSICAL BASIS OF DISTRIBUTION FUNCTIONS
3.4 QUANTUM DISTRIBUTION FUNCTIONS
3.5 FERMI DIRAC DISTRIBUTION FUNCTION
3.6. SPEED AND VELOCITY DISTRIBUTION FUNCTIONS
3.7 QUANTUM MECHANICAL MAXWELL-BOLTZMANN DISTRIBUTION FUNCTION
3.8. CLASSICAL MAXWELL-BOLZMANN DISTRIBUTION FUNCTION
CHAPTER IV
INTERACTING PARTICLES CONCEPTS
4.1 COLLISION CROSS SECTION
4.2 MEAN FREE PATH AND COLLISION FREQUENCY
4.3 DRIFT VELOCITY AND MOBILITY
4.4 PARTICLE FLUX AND CURRENT DENSITY
4.5 CONTINUITY EQUATION
4.6 ELECTRICAL CONDUCTIVITY
4.7 DIFFUSION
4.8 EINSTEIN RELATION
4.9 TRANSPORT OF CHARGED PARTICLE BEAMS THROUGH MATTER
4.9.1 STOPPING POWER IN GASES
4.9.2 ION IMPLANTATION IN SEMICONDUCTORS
CHAPTER V
BASIC PROPERTIES OF SOLIDS
5.1. CRYSTAL STRUCTURE
5.2 BAND THEORY OF SOLIDS
5.2.1 PHYSICAL APPROACH
5.2.2. MATHEMATICAL APPROACH
5.3 E - k DIAGRAM, REDUCED ZONE
5.4. EFFECTIVE MASS
5.5. CONCEPT OF A HOLE
5.6. INTRINSIC SEMICONDUCTORS
5.7 PROPERTIES OF COMMON SEMICONDUCTORS
5.7.1 GERMANIUM
5.7.2. SILICON.
5.7.3. COMPOUND SEMICONDUCTORS
CHARTER VI
EXTRINSIC SEMICONDUCTORS
6.1 EXTRINSIC SEMICONDUCTORS
6.2. n and p TYPE SEMICONDUCTORS
6.3. FERMI ENERGY IN EXTRINSIC SEMICONDUCTORS
6.4 MOBILITY AND SATURATION VELOCITY
6.5. RECOMBINATION OF CARRIERS
6.6. DIFFUSION LENGTH
6.7 ELECTRICAL CONDUCTIVITY IN SEMICONDUCTORS
6.8 HALL EFFECT
CHAPTER VII
ELECTRON EMISSION
7.l PHOTO-ELECTRIC EMISSION
7.2 THERMIONIC EMISSION
7.3 SCHOTTKY EFFECT
7.4 FIELD EMISSION
7.5 SECONDARY ELECTRON EMISSION
7.6* APPLICATIONS
7.6.1 THERMIONIC CATHODES
7.6.3 T.V. IMAGE TUBES. 31
7.6.4 FIELD EMISSION MICROSCOPY
CHAPTER VIII
JUNCTIONS AND RELATED DEVICES
8.1. FERMI LEVEL IN JUNCTIONS
8.2. METAL-METAL CONTACTS
8.3. METAL-SEMICONDUCTOR JUNCTIONS
8.3.1 SCHOTTKY BARRIER DIODE
8.4. SEMICONDUCTOR JUNCTIONS
8.4.1. HOMOJUNCTIONS (p - n Junctions)
8.4.1.1. DIODE CURRENT AND BARRIER POTENTIAL
8.4.1.2. DEPLETION LAYER WIDTH
8.4.1.3. JUNCTION AND DIFFUSION CAPACITANCE
8.4.2. HETEROJUNCTIONS 50
8.5. AVALANCHE BREAKDOWN
CHAPTER IX
BIPOLAR JUNCTION TRANSISTORS
9.1 PHYSICAL BASIS FOR BJT
9.2 BIPOLAR JUNCTION TRANSISTOR
9.3. n-p-n HOMOJUNCTION TRANSISTOR
9.4. EBERS-MOLL MODEL
9.5. TRANSISTOR CURRENT GAIN
9.5.1 EMITTER INJECTION EFFICIENCY
9.5.2. BASE TRANSPORT FACTOR
9.5.3. COLLECTOR EFFICIENCY
9.5.4. DEVIATIONS FROM IDEAL OPERATION
9.6. SMALL SIGNAL EQUIVALENT CIRCUIT OF A BIPOLAR TRANSISTOR
9.7. SWITCHING CHARACTERISTICS OF BJTs
9.7. HETEROJUNCTION BJT
CHAPTER X
JUNCTION FIELD EFFECT TRANSISTORS, JFET
10.1. VOLTAGE CONTROLLED RESISTOR
10.2. DRAIN CURRENT AND PINCH-OFF VOLTAGE
CHAPTER XI
METAL OXIDE SEMICONDUCTOR TRANSISTORS
11.1. MIS CAPACITOR
11.2 MOS FIELD EFFECT TRANSISTOR
11.2.1. Depletion Type MOSFET
>
11.2.2. Enhancement Type MOSFET 28
11.3. COMPLIMENTARY PAIR MOS TRANSISTOR CONFIGURATION (CMOS)
11.4 CHARGE COUPLED DEVICES
CHAPTER XII
HIGH FREQUENCY SOLID STATE DEVICES
12.1. FREQUENCY DEPENDENCE OF POWER GAIN AND NOISE
12.2. TRANSIT TIME EFFECTS IN BIPOLAR TRANSISTORS
12.3. TRANSIT TIME IN FET's
12.4. SCHOTTKY BARRIER FET ( MESFET )
12.5. MODULATION DOPED TRANSISTORS (HEMT or MODFET)
12.6. BALLISTIC TRANSISTORS
12.6.1. METAL BASE TRANSISTORS
12.6.2. BALLISTIC GaAs TRANSISTORS
12.7. TWO TERMINAL SOLID STATE DEVICES
12.7.1. GUNN DIODE
12.7.1.1. Domain Formation
12.7.1.2. MODES OF OPERATION
12.7.2. IMPATT (Read) DIODE
18.7.2.1. MODES OF CREATING INJECTION DELAY
12.7.2.2. IMPATT ( IMPact Avalanche and Transit Time ) DIODE
12.7.3. TUNNEL DIODE
CHAPTER XIII
ELECTRO-OPTIC DEVICES
13.1. PHOTON ABSORPTION AND EMISSION IN SEMICONDUCTORS
13.2. LIGHT SOURCES
13.3. PHOTON EMISSION
13.4. LIGHT EMITTING DIODES
13.5. OPTICAL WAVEGUIDES AND CAVITIES
13.6. LASERS
13.6.1. GASOUS AND SOLID LASERS
13.6.2. SEMICONDUCTOR LASERS
13.7. OPTICAL DETECTION
13.7.1. PHOTOCONDUCTIVITY
13.7.2. P-N JUNCTION DIODE
13.7.3. PiN DIODE
13.7.4. SCHOTTKY BARRIER DIODE
13.7.5. AVALANCHE PHOTODIODES
13.7.6. PHOTO-TRANSISTORS
13.8 QUANTUM WELL and SUPERLATTICE DEVICES
CHAPTER XIV
SEMICONDUCTOR and INTEGRATED CIRCUITS
14.1 CRYSTAL GROWTH and DOPING
14.1.1. DIFFUSION and ION IMPLANTATION
14.1.2. LIQUID and VAPOR PHASE EPITAXY
14.1.3. MOLECULAR BEAM EPITAXY (MBE)
14.1.4. CHEMICAL VAPOR DEPOSITION (CVD)
14.2. MASK MAKING
14.2.1. OPTICAL LITOGRAPHY
14.2.2. ELECTRON-BEAM LITOGRAPHY
14.2.3. X-RAY LITOGRAPHY
14.3. ETCHING 24
14.3.1. WET PROCESS
14.3.2. DRY PROCESS 25
14.4. DIELECTRIC LAYERS
14.5. INTERCONNECTS, LEADS
14.5.1. VAPOR DEPOSITION
14.5.2. SPUTTERING
14.5.3. CHEMICAL VAPOR DEPOSITION
CHAPTER XV
GAS DISCHARGES
15.1. GASEOUS DISCHARGES
15.1.1. TOWNSEND IONIZATION COEFFICIENTS
15.2.1. MICROELECTRONIC TRIODE
15.3. ELECTRON BEAM DEVICES
15.3.1. ELECTRON GUNS
15.4. FIELD-ELECTON INTERACTION
15.4.1. ELECTRON BUNCHING
15.5. SPACE CHARGE WAVES
15.6. KLYSTRON
15.6.1. ELECTROMAGNETIC RESONANT CAVITIES
15.6.2. BALLISTIC THEORY OF A KLYSTRON
15.7. TRAVELLING WAVE TUBES
15.7.1. PHASE AND GROUP VELOCITY
15.7.2. CONVECTION CURRENT
15.7.3. TRAVELLING WAVE TUBES (TWT)
15.7.4. ENERGY EXCHANGE
15.8. M-TYPE TRAVELLING WAVE TUBES, MAGNETRONS
15.9. BACKWARD WAVE TUBES
15.10. GYROTRONS
APPENDIX A
NOISE
A.1 NOISE POWER
A.2. JOHNSON NOISE
A.3. SHOT NOISE
A.4. 1/f NOISE
A.5 NOISE FIGURE
APPENDIX B
PHYSICAL CONSTANTS
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